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Strain in Graded Thickness GaAs/Si Heteroepitaxial Structures Grown with a Buffer Layer

Published online by Cambridge University Press:  28 February 2011

R.J. Nemanich ,
D.K. Biegelsen ,
R.A. Street ,
B. Downs ,
B.S. Krusor  and
R. D. Yingling
R.J. Nemanich
Affiliation:
Department of Physics, andDepartment of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-8202
D.K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
B. Downs
Affiliation:
Department of Physics, andDepartment of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-8202
B.S. Krusor
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. D. Yingling
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The strain in MBE GaAs/Si heterostructures grown with a buffer layer are characterized by Raman scattering and luminescence. A graded thickness sample was produced by slowly moving a shutter in front of the sample during the growth. Raman scattering and luminescence measurements made as a function of distance could be related to the strain in the film as a function of film thickness. The measurements showed tensile strain for all thicknesses. The strain in the overlayer was accounted for by the difference in thermal expansion of GaAs and Si. The buffer layer showed the largest tensile strain, and it is proposed that this strain was due to the presence of vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 245
Copyright
Copyright © Materials Research Society 1988

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References

1 Huang, Y., Yu, P.Y., Charasse, M.-N., Lo, Y., and Wang, S., Appl. Phys. Lett. 51, 192 (1987).Google Scholar
2 Zemon, S., Shastry, S.K., Norris, P., Jagannath, C. and Lambert, G., Solid State Commun. 58, 457 (1986).Google Scholar
3 Huang, Y., Yu, P.Y., Lee, H., and Wang, S., Appl. Phys. Lett. 52, 579 (1988).Google Scholar
4 Biegelsen, D.K., Ponce, F.A., Krusor, B.S., Tramontana, J.C., Yingling, R.D., Bringans, R.D., and Fenner, D.B., Mat. Res. Soc. Symp. Proc. 102, 116 (1988).Google Scholar
5 Krusor, B.S., Biegelsen, D.K., Yingling, R.D., and Abelson, J.R., J. Vac. Sci. Tech. B5, (in press, 1988).Google Scholar
6 Shen, H. and Pollak, F., Appl. Phys. Lett. 45, 692 (1984).Google Scholar
7 Weinstein, B.A. and Cardona, M., Phys. Rev. B5, 3120 (1972).Google Scholar