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Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

Published online by Cambridge University Press:  25 February 2011

Katsuhiro Uesugi ,
Masamichi Yoshimura ,
Takafumi Yao ,
Tomoshige Sato ,
Takashi Sueyoshi  and
Masashi Iwatsuki
Katsuhiro Uesugi
Affiliation:
Dcpartmcnt of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Dcpartmcnt of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takafumi Yao
Affiliation:
Dcpartmcnt of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Tomoshige Sato
Affiliation:
JEOL Ltd., 3–1–2 Musashino, Akishima, Tokyo 196, Japan
Takashi Sueyoshi
Affiliation:
JEOL Ltd., 3–1–2 Musashino, Akishima, Tokyo 196, Japan
Masashi Iwatsuki
Affiliation:
JEOL Ltd., 3–1–2 Musashino, Akishima, Tokyo 196, Japan
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Abstract

Scanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 619
Copyright
Copyright © Materials Research Society 1993

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References

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