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STM analysis of copper thin films using hyperthermal copper ions

Published online by Cambridge University Press:  17 March 2011

J.M. Pomeroy ,
B.H. Cooper  and
J.D. Brock
J.M. Pomeroy
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
B.H. Cooper
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA deceased August 1999
J.D. Brock
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
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Abstract

STM analysis of thin copper films grown on Cu(111) and Cu(100) at room temperature using hyperthermal ions reveals several morphological features not present in thermally grown films. Hyperthermal deposition of thin films has become a popular industrial technique due to observed decreases in film roughness and stress with increased grain sizes, but the link between incidence energy and these properties is poorly understood. Using a sophisticated molecular dynamics (MD) simulation, morphologies observed in experimentally grown films are correlated with the activation of hyperthermal atomistic mechanisms in the MD. Previous work has provided strong evidence for activation of adatom-vacancy pair production near 20 eV on Cu(111). Evidence will be presented here for the activation of sputter erosion near 40 eV. A proposal for quantifying the effect of energy on nucleation density by modifying the flux term in mean field nucleation theory will be presented. Other processes which directly contribute to smooth growth, such as atomic insertion near 10eV, have been proposed but are more difficult to correlate with the data due to their subtle morphological signatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N3.14
Copyright
Copyright © Materials Research Society 2002

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