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Stimulated Opticaltransitions in Er-Doped Silicon Nanostructures

Published online by Cambridge University Press:  11 February 2011

B. V. Kamenev ,
V. I. Emel'yanov ,
V. Yu. Timoshenko ,
P. K. Kashkarov ,
M.V. Lomonosov ,
E. I. Terukov  and
V. Kh. Kudoyarova
B. V. Kamenev
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102
V. I. Emel'yanov
Affiliation:
Moscow State University, Moscow, Russia
V. Yu. Timoshenko
Affiliation:
Moscow State University, Moscow, Russia
P. K. Kashkarov
Affiliation:
Moscow State University, Moscow, Russia
M.V. Lomonosov
Affiliation:
Moscow State University, Moscow, Russia
E. I. Terukov
Affiliation:
Ioffe Physico-Technical Institute, St. Petersburg, Russia
V. Kh. Kudoyarova
Affiliation:
Ioffe Physico-Technical Institute, St. Petersburg, Russia
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Abstract

Photoluminescence (PL) of Er3+ ions in nanocrystalline (amorphous) silicon matrix has been investigated under a high level of optical excitation. A superlinear increase of the PL intensity, a shortening of the PL decay time, and strong angular dependence were found at the excitation intensity above 200 kW/cm2. These effects are observed only in samples with presence of silicon nanocrystalls and explained by stimulated optical transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F9.2
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Pomrenke, G. S., Klein, P. B., Langer, D. W. (Eds.), Rare Earth Doped Semiconductors, MRS Symposia Proceedings No. 301, Materials Research Society, Pittsburgh, PA, 1993.Google Scholar
2. Priolo, F., Franzo, G., Coffa, S., Polman, A., Libertino, S., Barklie, R., and Carey, D., J. Appl. Phys. 78, 3874 (1995).Google Scholar
3. Fuhs, W., Ulber, I., Weiser, G., Bresler, M. S., Gusev, O. B., Kuznetsov, A. N., Kudoyarova, V. Kh., Terukov, E. I., and Yassievich, I. N., Phys. Rev. B 56, 9545 (1997)Google Scholar
4. Shin, J. H., Serna, R., van den Hoven, G. N., Polman, A., van Sark, W.G.J.H. M., Vredenberg, A. M., Appl. Phys. Lett. 68, 997 (1996).Google Scholar
5. Watanabe, K., Fujii, M., and Hayashi, S. J. Appl. Phys. 90, 4761 (2001)Google Scholar
6. Schmidt, M., Heitmann, J., Scholz, R. and Zacharias, M. J. of Non-Cryst. Sol., 299–302, 678 (2002).Google Scholar
7. Emel'yanov, V. I., Kamenev, B. V., Kashkarov, P. K., Konstantinova, E.A., Timoshenko, V. Yu., Terukov, E. I., Bresler, M. S., Gusev, O. B.. Phys. Sol. State 42, 1410 (2000).Google Scholar
8. Kamenev, B. V., Emel'yanov, V. I., Konstantinova, E. A., Kashkarov, P. K., Timoshenko, V. Yu., Chao, Chen, Kudoyarova, V. Kh., and Terukov, E. I.. Applied Physics B74, p.151–154 (2002).Google Scholar
9. Kamenev, B. V., Timoshenko, V. Yu., Konstantinova, E. A., Kudoyarova, V. Kh., Terukov, E. I., and Kashkarov, P. K. J. of Non-Cryst. Sol., 299–302, p. 668 (2002).Google Scholar