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Stacked Layers of C-Induced Ge Quantum Dots

Published online by Cambridge University Press:  10 February 2011

O. G. Schmidt ,
K. Eberl ,
S. Schieker ,
N. Y. Jin-Phillipp ,
F. Phillipp ,
J. Auerswald  and
P. Lamperter
O. G. Schmidt
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraß;e 1, 70569 Stuttgart, Germany
K. Eberl
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraß;e 1, 70569 Stuttgart, Germany
S. Schieker
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraß;e 1, 70569 Stuttgart, Germany
N. Y. Jin-Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany and Seestraße 92, 70174 Stuttgart, Germany
F. Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany and Seestraße 92, 70174 Stuttgart, Germany
J. Auerswald
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany and Seestraße 92, 70174 Stuttgart, Germany
P. Lamperter
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany and Seestraße 92, 70174 Stuttgart, Germany
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Abstract

Fifty layers of carbon-induced germanium dots, separated by 9.6 nm Si, are stacked by solid source molecular beam epitaxy. Each dot layer consists of 0.2 monolayers of pre-deposited carbon and 2.4 monolayers of post-grown Ge. These carbon-induced germanium dots are only 10 to 15 nm in diameter and 1 to 2 nm in height. Vertical alignment due to penetrating strain fields of underlying dot layers is not observed. Unlike to an identical structure without the pre-growth of carbon, a variety of advantageous aspects such as strain compensation, strongly enhanced no-phonon photoluminescence at a wavelength of around 1.3 μm and the possibility of effective waveguiding make this stack of C-induced Ge islands an attractive structure for Si based optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 171
Copyright
Copyright © Materials Research Society 1998

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