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Stabilisation of Hg1-xCdxTe:Hg1-yCdyTex ≠ y) Heterointerfaces and Applications in Infra Red Devices

Published online by Cambridge University Press:  25 February 2011

Paul A. Clifton  and
Paul D. Brown
Paul A. Clifton
Affiliation:
School of Engineering and Applied Science, University of Durham, South Road, Durham, DH1 3LE, U.K.
Paul D. Brown
Affiliation:
School of Engineering and Applied Science, University of Durham, South Road, Durham, DH1 3LE, U.K.
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Abstract

The interface between Hg1-xCdxTe(0 ≦ x ≦ 1) and Hg1-yCdyTe(0 ≦ y ≦ 1) epitaxial layers of different composition (x ≠ y) is unstable with regard to the intermixing of the Hg and Cd cations within the Group II sublattice. This phenomenon may give rise to long-term stability problems in HgTe-(Hg,Cd)Te superlattices and composition grading between (Hg,Cd)Te absorber layers and CdTe buffer or passivation layers in epitaxial infra red detectors. In this paper, a novel approach to the inhibition of interdiffusion in these systems is discussed. This involves the growth of an intervening ZnTe barrier layer at the heterointerface between two (Hg,Cd)Te layers. Initial results are presented which indicate the effectiveness of this technique in reducing interdiffusion in an experimental heterostructure grown by MOVPE. Some possible applications in a variety of HgTe-based long wavelength devices are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 135
Copyright
Copyright © Materials Research Society 1991

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References

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