Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-02T23:25:29.043Z Has data issue: false hasContentIssue false
  • English
  • Français

Spin-on Polymer Gate Dielectric for High Performance Organic Thin Film Transistors

Published online by Cambridge University Press:  10 February 2011

C.D. Sheraw ,
D.J. Gundlach  and
T.N. Jackson
C.D. Sheraw
Affiliation:
Department of Electrical Engineering, Center for Thin Film Devices, and Electronics and Materials Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
D.J. Gundlach
Affiliation:
Department of Electrical Engineering, Center for Thin Film Devices, and Electronics and Materials Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
T.N. Jackson
Affiliation:
Department of Electrical Engineering, Center for Thin Film Devices, and Electronics and Materials Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

We have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to devices using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 403
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gundlach, D. J., Lin, Y. Y., Jackson, T. N., Nelson, S. F., and Schiom, D. G., IEEE Electron Device Letters, vol. 18, p. 87 (1997).Google Scholar
2. Lin, Y. Y., Gundlach, D. J., Nelson, S. F., and Jackson, T. N., IEEE Electron Device Letters, vol. 18, p. 606 (1997).Google Scholar
3. Burdeaux, D., Townsend, P., Canr, J., and Garrou, P., Journal of Electronic Materials, vol. 19, p. 1357 (1990).Google Scholar
4. Botbra, S., Kellam, M., and Garrou, P., Journal of Electronic Materials, vol. 23, p. 819 (1994).Google Scholar
5. Lan, J. H. and Kanicki, J., IEEE Electron Device Letters, vol. 20, p. 129 (1999).Google Scholar
6. Tacito, R. and Steinbruchel, C., Journal of the El ectrochemical Society, vol. 143, p. 1974 (1996).Google Scholar
7. Senturia, S., Miller, R., Denton, D., Smith, F., and Neuhas, H., Proceedings of Second International Conference on Polyimides, Polyimides: Synthesis, Characterization and Application, p. 107 (1985).Google Scholar
8. Thomasson, D. B., Bonse, M., Koval, R. J., Huang, J. R., Wronski, C. R., and Jackson, T. N., 56th Annual Device Research Conference Digest, p. 126 (1998).Google Scholar