Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-24T15:46:16.065Z Has data issue: false hasContentIssue false
  • English
  • Français

Spin-On Glass as low temperature gate insulator

Published online by Cambridge University Press:  22 September 2011

Miguel A. Domínguez ,
Pedro Rosales ,
Alfonso Torres ,
Joel Molina ,
Mario Moreno ,
Francisco J. De la Hidalga ,
Carlos Zuñiga  and
Wilfrido Calleja
Miguel A. Domínguez
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Pedro Rosales
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Alfonso Torres
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Joel Molina
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Mario Moreno
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Francisco J. De la Hidalga
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Carlos Zuñiga
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Wilfrido Calleja
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Get access

Abstract

In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. Our SOG film was deposited at temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. Also, analysis of surface roughness by AFM is presented. We demonstrated the use of SOG as gate insulator, fabricating and characterizing inverted staggered a-SiGe:H TFTs. The observed results are promising and suggest that SOG films deposited at 200°C in the Laboratory of Microelectronics of INAOE could be an alternative to improve electrical characteristics of TFTs on low temperature flexible substrates.

Keywords

insulatorthin filmamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f08-10
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Joshi, P. C., Voutsas, A. T. and Hartzell, J. W., Electrochem. Soc. 215th meeting, Abs. 776 (2009).Google Scholar
2. Cheon, J. H., Bae, J. H., and Jang, J., IEEE Electron Device Lett., 29, 3 (2008).Google Scholar
3. Cheon, J. H., Bae, J. H., Lee, W. G. and Jang, J., Electrochem. Solid-state lett., 11, 4 (2008).Google Scholar
4. Domínguez, M., Rosales, P., Torres, A., Molina, J., Moreno, M., De la Hidalga, F., Zuñiga, C. and Calleja, W., Proc. IEEE Electronics, Robotics and Automotive Mechanics Conference (ISBN: 978-0-7695-4204-1, Cuernavaca, Morelos, Mexico) pp. 741–744 (2010).Google Scholar
5. Son, Y. D., Yang, K. D., Bae, B. S., Jang, J., Hong, M. and Kim, S. J., IEEE Trans. Electron Devices, 53, 5 (2006).Google Scholar
6. Huang, J. J., Liu, C. J., Lin, H. C., Tsai, C. J., Chen, Y. P., Hu, G. R. and Lee, C. C., J. Phys. D: Appl. Phys., 41, 245502 (2008).Google Scholar