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Spectroscopy of Proton Implanted GaN

Published online by Cambridge University Press:  15 February 2011

M.G. Weinstein ,
M. Stavola ,
C.Y. Song ,
C. Bozdog ,
H. Przbylinska ,
G.D. Watkins ,
S.J. Pearton  and
R.G Wilson
M.G. Weinstein
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
M. Stavola
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
C.Y. Song
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
C. Bozdog
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
H. Przbylinska
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
G.D. Watkins
Affiliation:
University of Florida, Dept. of Materials Science, Gainesville, Florida 32611
S.J. Pearton
Affiliation:
University of Florida, Dept. of Materials Science, Gainesville, Florida 32611
R.G Wilson
Affiliation:
Consultant, Stevenson Ranch, California 92065
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Abstract

Vibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Si-doped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm-1 in GaN that had been implanted with protons. These frequencies are close to those predicted for VGa-Hn complexes, leading to the tentative assignment of the new lines to VGa defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LEI, both of which were seen previously for electron-irradiated GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G5.9
Copyright
Copyright © Materials Research Society 1999

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