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Spectroscopic Studies of Low Dielectric Constant Fluorinated Amorphous Carbon Films for Ulsi Integrated Circuits

Published online by Cambridge University Press:  10 February 2011

Yanjun Ma ,
Hongning Yang ,
J. Guo ,
C. Sathe ,
A. Agui  and
J. Nordgren
Yanjun Ma
Affiliation:
Sharp Microelectronics Tech., 5700 NW Pacific Rim Blvd, Camas, WA 98607
Hongning Yang
Affiliation:
Sharp Microelectronics Tech., 5700 NW Pacific Rim Blvd, Camas, WA 98607
J. Guo
Affiliation:
Physics Department, Uppsala University, Uppsala, Sweden
C. Sathe
Affiliation:
Physics Department, Uppsala University, Uppsala, Sweden
A. Agui
Affiliation:
Physics Department, Uppsala University, Uppsala, Sweden
J. Nordgren
Affiliation:
Physics Department, Uppsala University, Uppsala, Sweden
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Abstract

Performance of future generations of integrated circuits will be limited by the RC delay caused by on-chip interconnections. Overcoming this limitation requires the deployment of new high conductivity metals such as copper and low dielectric constant intermetal dielectrics (IMD). Fluorinated amorphous carbon (a-CFx) is a promising candidate for replacing SiO2 as the IMD. In this paper we investigated the structure and electronic properties of a-CFx thin films using high-resolution x-ray absorption, emission, and photoelectron spectroscopy. The composition and local bonding information were obtained and correlated with deposition conditions. The data suggest that the structure of the a-CFx is mostly of carbon rings and CF2 chains cross-linked with C atoms. The effects of growth temperature on the structure and the thermal stability of the film are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 524: Symposium V – Application of Synchrotron Radiation Techniques…IV , 1998 , 169
Copyright
Copyright © Materials Research Society 1998

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References

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