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Spectroscopic Ellipsometry Studies of Nanocrystalline Silicon in Thin-Film Silicon Dioxide

Published online by Cambridge University Press:  11 February 2011

Gerald E. Jellison Jr ,
Supriya Jaiswal ,
Christopher M. Rouleau ,
John T. Simpson ,
Clark W. White  and
C. Owen
Gerald E. Jellison Jr
Affiliation:
Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6030
Supriya Jaiswal
Affiliation:
Engineering Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6004
Christopher M. Rouleau
Affiliation:
Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6030
John T. Simpson
Affiliation:
Engineering Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6004
Clark W. White
Affiliation:
Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6030
C. Owen
Affiliation:
Hinds Instruments, Inc. 3175 N. W. Aloclek Drrive, Hillsboro, OR 97124–7135
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Abstract

Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation followed by thermal annealing in forming gas at 1100 °C for 1 hour. The ion implantation is performed using multiple implants with different implantation energies and doses to create a quasi-flat concentration of silicon atoms throughout the silicon dioxide film. These samples are then analyzed using spectroscopic ellipsometry to characterize their linear optical properties. Implantations with small doses (5 × 1020 Si atoms/cm3) increase the refractive index by a small amount (δn∼0.006 at 600nm), while implantations with moderate dose (5 × 1021 Si atoms/cm3) have a larger increase in refractive index and exhibit optical absorption above ∼1.9 eV (650 nm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F1.4
Copyright
Copyright © Materials Research Society 2003

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References

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