Hostname: page-component-7bb8b95d7b-w7rtg Total loading time: 0 Render date: 2024-09-06T11:49:44.186Z Has data issue: false hasContentIssue false
  • English
  • Français

Space-Time Resolved Reflectivity Measurements of Picosecond Laser Induced Phase Transitions in <111> Silicon

Published online by Cambridge University Press:  15 February 2011

R. Yen ,
J. M. Liu ,
H. Kurz  and
N. Bloembergen
R. Yen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
J. M. Liu
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
H. Kurz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
N. Bloembergen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
Get access

Abstract

The changes in reflectivity of a silicon surface, irradiated by a green picosecond pulse, are probed during and following that pulse with a spatial resolution of 10μm. The data indicate the development of a liquid phase, and a resolidification either into a single crystal or an amorphous phase. The latter has a characteristic ring-type pattern, and occurs only at locations where the incident picosecond laser fluence lies between 0.2 and 0.26 J/cm2. The reflectivity data appear to be in good quantitative agreement with a “simple heating” model, in which the electrons and phonons maintain a local thermodynamic equilibrium on a picosecond time scale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 37
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Liu, P. L., Yen, R., Bloembergen, N., and Hodgson, R. T., Appl. Phys. Lett. 34, 864 (1979).Google Scholar
2. Liu, J. M., Yen, R., Kurz, H., and Bloembergen, N., Appl. Phys. Lett. 39, (1981).Google Scholar
See also article by Liu, J. M. et al. in this proceeding.Google Scholar
3. Van Vechten, J. A., article in this proceeding.Google Scholar
4. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980), andGoogle Scholar
Aydinli, A., Lo, H. W., Lee, M. C., and Compaan, A., Phys. Rev. Lett. 46, 1640 (1981).Google Scholar
5. Lietoila, A. and Gibbons, J., article in this proceeding.Google Scholar
6. Gamo, K., Murakami, K., Kawabe, M., Namba, S. and Aoyagi, Y. in Laser and Electron-Beam Solid Interactions and Material Processing, edited by Gibbons, J. F., Hess, L. D., and Sigmon, T. W. (North-Holland, Amsterdam, 1981).Google Scholar
7. Lampert, M. O., Koebel, J. M. and Siffert, P., J. Appl. Phys. 52, 4975 (1981); andGoogle Scholar
Auston, D., private communication.Google Scholar
8. Yen, R., Liu, P. L., Kurz, H. and Bloembergen, N., submitted to Applied Physics (Springer-Verlag).Google Scholar