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Space Charge Limited Current in A-Si:H Devices Using High Electric Fields

Published online by Cambridge University Press:  25 February 2011

J. C. Van Den Heuvel ,
R. C. Van Oort ,
B. Bokhorst  and
M. J. Geerts
J. C. Van Den Heuvel
Affiliation:
Delft University of Technology, Mekelweg 4, 2628 CD Delft. The Netherlands
R. C. Van Oort
Affiliation:
Delft University of Technology, Mekelweg 4, 2628 CD Delft. The Netherlands
B. Bokhorst
Affiliation:
Delft University of Technology, Mekelweg 4, 2628 CD Delft. The Netherlands
M. J. Geerts
Affiliation:
Delft University of Technology, Mekelweg 4, 2628 CD Delft. The Netherlands
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Abstract

Space Charge Limited Current (SCLC) measurements are used to obtain the density of gap states of intrinsic a-Si:H. If an electron is trapped by a positively charged defect, then the electron can be released by a high electric field which disturbs the SCLC measurement. A correction for this effect, which is called Poole-Frenkel emission, in SCLC measurements is derived and used to analyze current-voltage measurements performed on n-i-n a-Si:H devices. It is shown that the Poole-Frenkel emission is absent, and that this is in accordance with the contemporary models for the gap states in a-Si:H.

We also studied the characteristic temperature which is based on the concept that the distribution of gap states is exponential, and concluded that this distribution is not exponential.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 155
Copyright
Copyright © Materials Research Society 1989

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References

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