Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-12T09:28:13.316Z Has data issue: false hasContentIssue false
  • English
  • Français

Solute Trapping of Ge in Al

Published online by Cambridge University Press:  26 February 2011

Patrick M. Smith ,
Jeffrey A. West  and
Michael J. Aziz
Patrick M. Smith
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
Jeffrey A. West
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
Michael J. Aziz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
Get access

Abstract

Partitioning during rapid solidification of dilute Al-Ge alloys has been investigated. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 m/s to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient k. A significant degree of lateral film growth during solidification confines determination of k to the placing of an upper bound of 0.22 on k for solidification velocities in this range. We place a lower limit of 10m/s on the “diffusive velocity,” which locates the transition from solute paritioning to solute trapping in the Continuous Growth Model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 331
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Aziz, Michael J. and Kaplan, Thoedore, Acta. metall. 36, 2335 (1988).Google Scholar
[2] Goldman, L. M. and Aziz, M. J., J. Mater. Res. 2 524 (1987).Google Scholar
[3] Aziz, M. J., Tsao, J. Y., Thompson, M. O., Peercy, P. S., and White, C. W., Phys. Rev. Lett. 56, 2489 (1986).Google Scholar
[4] Hoglund, D. E., Aziz, M. J., Stiffler, S. R., Thompson, M. O., Tsao, J. Y., and Peercy, P. S., Acta. metall., in press.Google Scholar
[5] Aziz, M. J., Tsao, J. Y., Thompson, M. O., Peercy, P. S., White, C. W., and Christie, W. H., Mater. Res. Soc. Proc. 35, 153 (1985).Google Scholar
[6] Tsao, J. Y., Picraux, S. T., Peercy, P. S., Thompson, Michael O., Appl. Phys. Lett. 48, 278 (1986).Google Scholar
[7] Galvin, G. J., Thompson, Michael O., Mayer, J. W., Hammond, R. B., Paulter, N., and Peercy, P. S., Phys. Rev. Lett. 48, 33 (1982).Google Scholar
[8] Thompson, Michael O., PhD. Thesis, Cornell University, 1984.Google Scholar
[9] Computer simulations were adapted from code provided by Thompson, M. O. of Cornell University.Google Scholar
[10] Baeri, P. and Campisano, S. U., in Laser Annealing of Semiconductors, edited by Poate, I. M. and Mayer, James W. (Academic Press, New York, 1982), chapter 4.Google Scholar