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Solid Phase Processes for Semiconductor-On-Insulator

Published online by Cambridge University Press:  25 February 2011

C.V. Thompson
C.V. Thompson*
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA. 02139
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Abstract

A wide variety of techniques for producing device-quality semiconductor films on insulating substrates (SOI) are being studied. Processes which provide low defect density films at low temperatures and which do not require seeding from a single crystal substrate would offer the greatest flexibility. While such processes do not currently exist, approaches based on crystallization of amorphous silicon or grain growth in polycrystalline silicon are being investigated. Development of either approach requires careful control of film properties and improved understanding of the fundamental materials processes involved. Theory and experiments on surface-energy-driven secondary grain growth (SEDS6G) are briefly reviewed. Controlled SEDS66 may provide a low temperature means of obtaining low defect density films of a variety of materials on a common substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 711
Copyright
Copyright © Materials Research Society 1985

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References

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