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Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature

Published online by Cambridge University Press:  26 February 2011

G. Lulli ,
P. G. Merli  and
M. Vittori Antisari
G. Lulli
Affiliation:
CNR - Istituto LAMEL, Via dé Castagnoli n.1 - 40126 Bologna, Italy
P. G. Merli
Affiliation:
CNR - Istituto LAMEL, Via dé Castagnoli n.1 - 40126 Bologna, Italy
M. Vittori Antisari
Affiliation:
ENEA - Divisone Scienza dei Materiali, CRE Casaccia, CP 2400 00100 Roma, Italy
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Abstract

Solid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the faste

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 375
Copyright
Copyright © Materials Research Society 1988

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References

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