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Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

Published online by Cambridge University Press:  11 February 2011

R.E. Melgarejo ,
M.S. Tomar ,
A. Hidalgo  and
R.S. Katiyar
R.E. Melgarejo
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
M.S. Tomar
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
A. Hidalgo
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
R.S. Katiyar
Affiliation:
Physics Department, University of Puerto Rico, San Juan, PR 00931–3343
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Abstract

Nd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.35
Copyright
Copyright © Materials Research Society 2003

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Email: [email protected]

References

REFERENCES

Aurivillius, B., Arkiv. Kemi 1, 463 (1949)Google Scholar
2. Subbarao, E.C., J. Phys. Chem. Solids 23, 665 (1962)Google Scholar
3. Armstrong, R.A. and Newnham, R.E., Mater. Res. Bull. 7, 1025 (1972)Google Scholar
4. Withers, R.L., Thompson, J.G., and Rae, A.D., J. Solid State Chem. 94, 404 (1991)Google Scholar
5. Chon, U., Jang, H.M., Kim, M.G., and Chang, C.H., Phys. Rev. Lett. 89, 0876011 (2002).Google Scholar
6. Melgarejo, R.E., Tomar, M.S., Bhaskar, S., Dobal, P.S., and Katiyar, R.S, Appl. Phys. Lett. 81, 2611 (2002).Google Scholar
7. Kojima, T., Sakai, T., Watanabe, T., Funakubo, H., Saito, K., and Osada, N., Appl. Phys. Lett. 80, 2746 (2002)Google Scholar
8. Graves, P. R., Hua, G., Myhra, S., and Thompson, J. G., J. Solid State Chem. 144, 112 (1995).Google Scholar
9. Kojima, S., Imaizumi, R., Hamazaki, S., and Takaahige, M., Jpn. J. Appl. Phys. 33, 5559 (1994).Google Scholar
10. Osada, M., Tada, M., Kakihama, M., Watanabe, T., and Funakubo, H., Jpn. J. Appl. Phys. Part 1, 40, 5572 (2001).Google Scholar
11. Kojima, S. and Shimida, S., Physica, B 219–220, 617 (1996).Google Scholar