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Soi Formation by a Line-Source Electron Beam and Electrical Characteristics

Published online by Cambridge University Press:  28 February 2011

H. Hada ,
H. Okabayashi ,
S. Saito ,
T. Nakamura  and
Y. Kawase
H. Hada
Affiliation:
Microelectronics Research Laboratories
H. Okabayashi
Affiliation:
Microelectronics Research Laboratories
S. Saito
Affiliation:
Microelectronics Research Laboratories
T. Nakamura
Affiliation:
R&D Planning and Technical Service Division NEC Corporation 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan
Y. Kawase
Affiliation:
R&D Planning and Technical Service Division NEC Corporation 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan
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Abstract

Crystal quality of SOI and electrical characteristics of p-MOSFETs fabricated in SOI films have been studied. The SOI recrystallization is done by a cw-operated, high-power, line-source and line-shaped electron beam annealing. Single crystal SOI strips, 15~20¼mxa few mm in sized, are formed with a good uniformity on a 4 inch diameter wafer by adopting the step and repeat system in the annealing apparatus. p-MOSFETs with ~90% field effect mobility of the bulk values are fabricated in the SOI films. The electrical characteristics of p-MOSFETs, fabricated in the SOI regions beyond the lateral seeding distance (~15¼m), are found to be independent of the low angle grain boundary density in the MOSFET channel, when the low angle grain boundaries extended toward the channel width direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 201
Copyright
Copyright © Materials Research Society 1988

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References

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