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Smoothing During Ion-Assisted Growth by Transient Ion Beam-Induced Defects

Published online by Cambridge University Press:  21 February 2011

B.K. Kellerman ,
E. Chason ,
J.A. Floro ,
S.T. Picraux  and
J.M. White
B.K. Kellerman
Affiliation:
Sandia National Laboratories, albuquerque, New Mexico 87185 Science and Technology Center at the University of Texas at austin, austin, Texas 78712
E. Chason
Affiliation:
Sandia National Laboratories, albuquerque, New Mexico 87185 Science and Technology Center at the University of Texas at austin, austin, Texas 78712
J.A. Floro
Affiliation:
Sandia National Laboratories, albuquerque, New Mexico 87185 Science and Technology Center at the University of Texas at austin, austin, Texas 78712
S.T. Picraux
Affiliation:
Sandia National Laboratories, albuquerque, New Mexico 87185 Science and Technology Center at the University of Texas at austin, austin, Texas 78712
J.M. White
Affiliation:
Sandia National Laboratories, albuquerque, New Mexico 87185 Science and Technology Center at the University of Texas at austin, austin, Texas 78712
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Abstract

Several studies have shown that the surface morphology can be smoother during simultaneous ion bombardment and growth than during growth alone, however, the atomistic mechanism responsible for the smoothing effect has been difficult to determine. We have developed Monte Carlo simulations of growth and defect diffusion to model the interaction between growth atoms and ion-induced defects and to present a simple atomistic mechanism that describes the effects of low-energy ion bombardment during ion-assisted growth of germanium. Measurements of ion-induced point defect production indicate that a large number of defects exist only temporarily on the surface at typical growth temperatures, because the defects have sufficient mobility to recombine and annihilate. We propose that this ion-induced transient defect population plays a significant role in modifying the dynamic surface morphology. the simulations support a surface smoothing mechanism that involves the destabilization of adatom islands by the transient ion-induced defects. the optimum simulated steady-state surface morphology can be achieved with ion-induced defect production rates less than or equal to 10 defects/ion. We find that low-energy ion bombardment during growth effectively lowers the temperature at which step-flow growth can be achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 349
Copyright
Copyright © Materials Research Society 1995

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