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Slurry Development For Cu/Ultra Low k CMP

Published online by Cambridge University Press:  01 February 2011

Hugh Li ,
Matt VanHaneham  and
John Quanci
Hugh Li
Affiliation:
Rodel, Inc.
Matt VanHaneham
Affiliation:
Rodel, Inc.
John Quanci
Affiliation:
Rodel, Inc.
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Extract

Conventional CMP for Cu/Ultra-low k (k<2.4) integration faces significant technical challenges [1-2]. The majority of ULK materials are made porous to reduce the dielectric constant, while trading off on the mechanical strength [3-6]. With diminished hardness, elasticity and adhesion, the CMP process has to be “kinder and gentler”: lower down force, lower relative velocity, softer pad, and slurry with lower abrasive content [1,7]. In a word, the mechanical portion of the planarization process would be greatly reduced. To maintain the same performance, one has to rely on the chemical reactions to make Cu/ULK CMP a viable process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F5.3
Copyright
Copyright © Materials Research Society 2003

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References

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