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Size control of gas phase grown silicon nanoparticles by varying the plasma OFF time in silane pulsed plasma

Published online by Cambridge University Press:  18 May 2015

A. Mohan
Affiliation:
Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science-Physics of Devices, High Tech Campus 21, 5656 AE Eindhoven, The Netherlands
I. Poulios
Affiliation:
Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science-Physics of Devices, High Tech Campus 21, 5656 AE Eindhoven, The Netherlands
R.E.I. Schropp
Affiliation:
Energy research Center of the Netherlands (ECN), Solar Energy, High Tech Campus 21, 5656 AE Eindhoven; and Eindhoven University of Technology (TU/e), Department of Applied Physics, Plasma & Materials Processing, P.O. Box 513, 5600 MB Eindhoven
J.K. Rath
Affiliation:
Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science-Physics of Devices, High Tech Campus 21, 5656 AE Eindhoven, The Netherlands
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Abstract

Silicon nanoparticles are synthesized by very high frequency Plasma Enhanced Chemical Vapor Deposition (vhf-PECVD) in the gas phase. Pulsed plasmas are used to obtain particles with a narrow size distribution. The role of plasma OFF times is studied to tailor the size of the silicon nanoparticles. Various plasma OFF times are chosen, both longer- and shorter -than the residence time of the gases in the discharge. Time resolved optical emission spectroscopy (TROES) studies provide additional information about the growth precursor dynamics during plasma modulation. The size and the size distribution studies of the particles are done with transmission electron microscopy (TEM). These studies reveal that a plasma OFF time longer than the residence time is favorable for the formation of quantum sized silicon particles.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Nguyen-Tran, T., i Cabarrocas, P. R., and Patriarche, G. Appl. Phys. Lett. 91, 111501 (2007).CrossRefGoogle Scholar
Oda, S. and Nishiguchi, K. Journal De Physique IV 11 (Pr.3)10651071 (2001).CrossRefGoogle Scholar
Otobe, M., Yajima, H., and Oda, S. Appl. Phys. Lett. 72, 1089 (1998).CrossRefGoogle Scholar
Mangolini, L., Thimsen, E., and Kortshagen, U. Nano Lett 5, 655 (2005).CrossRefGoogle Scholar
Shiratani, M., Koga, K., Ando, S., Inoue, T., Watanabe, Y., Nunomura, S., and Kondo, M. Surface & Coatings Technology 201, 5468 (2007).CrossRefGoogle Scholar
Shiratani, M., Maeda, S., Koga, K. and Watanabe, Y. Jpn. J. Appl. Phys. 39, 287293 (2000).CrossRefGoogle Scholar
Howling, A. A., Sansonnens, L., Dorier, J.‐L. and Hollenstein, Ch. J. Appl. Phys. 75, 1340 (1994).CrossRefGoogle Scholar
Mohan, A., de Jong, M.M., Poulios, I., Schropp, R.E.I. and . Rath, J.K, submitted to J. Phys. D: Appl. Phys.Google Scholar