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Six-Inch Diameter GaAs on Si Wafers
Published online by Cambridge University Press: 28 February 2011
Abstract
The growth of high-quality single crystal GaAs on Si wafers up to six inches in diameter by organometallic chemical vapor deposition (OMCVD) is reported. These wafers have specular surfaces, excellent thickness uniformity, and are shown to have properties comparable to those of smaller diameter GaAs on Si wafers. The mechanical and electrical properties of the six inch GaAs on Si wafers are shown to be suitable for GaAs device fabrication.
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- Copyright © Materials Research Society 1988
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