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Site-Control Technology for InAs Quantum Dot Formation by Direct Deposition of Indium Nano-Dots with a Nano-Jet Probe

Published online by Cambridge University Press:  01 February 2011

Shunsuke Ohkouchi ,
Yusui Nakamura ,
Hitoshi Nakamura  and
Kiyoshi Asakawa
Shunsuke Ohkouchi
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
Yusui Nakamura
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
Hitoshi Nakamura
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
Kiyoshi Asakawa
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
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Abstract

We propose a new nano-probe-assisted technique which enables the formation of site-controlled InAs quantum dots (QDs). High-density two-dimensional indium (In) nano-dot arrays on a GaAs substrate were fabricated by using a specially designed atomic-force-microscope (AFM) probe (the Nano-Jet Probe). This developed probe has a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. By applying a voltage pulse between the pyramidal tip and the sample, In clusters were extracted from the reservoir tank within the stylus through the aperture, resulting in the In nano-dot formation. These In nano-dots can be directly converted to InAs QD arrays by subsequent irradiation of arsenic flux.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.29
Copyright
Copyright © Materials Research Society 2004

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References

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