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SiO2 Film Coatings with VUV Excimer Lamp CVD

Published online by Cambridge University Press:  10 February 2011

K. Kurosawa
Affiliation:
Dept. of E&E Eng., University of Miyazaki, Miyazaki 889-2192, Japan Phone: +81 985 572811; Fax: +81 985 581672;, [email protected]. ac.jp
N. Takezoe
Affiliation:
Dept. of E&E Eng., University of Miyazaki, Miyazaki 889-2192, Japan Phone: +81 985 572811; Fax: +81 985 581672;, [email protected]. ac.jp
H. Yanagida
Affiliation:
Dept. of E&E Eng., University of Miyazaki, Miyazaki 889-2192, Japan Phone: +81 985 572811; Fax: +81 985 581672;, [email protected]. ac.jp
R. Nomura
Affiliation:
Dept. of E&E Eng., University of Miyazaki, Miyazaki 889-2192, Japan Phone: +81 985 572811; Fax: +81 985 581672;, [email protected]. ac.jp
A. Yokotani
Affiliation:
Dept. of E&E Eng., University of Miyazaki, Miyazaki 889-2192, Japan Phone: +81 985 572811; Fax: +81 985 581672;, [email protected]. ac.jp
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Abstract

Silica film coatings were demonstrated using photo-chemical vapor deposition with a 172-nm Xe excimer lamp. Tetraethoxyorthosilicate (TEOS) molecules were successfully dissociated into SiO2+2C2H5-OH+;(residual C and H) with the 7.2-eV photons. The films were deposited onto a quartz or Al203 single crystal substrate with the deposition rate of 1 nm/min. The films were uniform and smooth enough for optical applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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