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Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure

Published online by Cambridge University Press:  18 June 2014

Feng Zhao ,
Allen Lim ,
Zhibang Chen  and
Chih-Fang Huang
Feng Zhao
Affiliation:
Micro/Nanoelectronics and Energy Laboratory, Electrical Engineering, School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686 USA
Allen Lim
Affiliation:
Micro/Nanoelectronics and Energy Laboratory, Electrical Engineering, School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686 USA
Zhibang Chen
Affiliation:
Micro/Nanoelectronics and Energy Laboratory, Electrical Engineering, School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686 USA
Chih-Fang Huang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, 30013 Hsinchu, Taiwan, R.O.C.
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Abstract

In this paper, single crystal 4H-SiC MEMS devices with n-p-n epitaxial structure was fabricated. A dopant-selective photoelectrochemical etching technique was applied to etch the sacrificial p-type SiC layer to release n-type SiC suspended structures on n-type SiC substrate. The selective etching was achieved by applying a bias which employs the different flat-band potentials of n-SiC and p-SiC in KOH solution. Such MEMS devices have the potential to fully exploit the superior properties of single crystal SiC for harsh environment operation, as well as mature epitaxial growth and device fabrication of 4H-SiC. The n-p-n structure, together with the previously reported p-n structure, extends the capability of monolithic integration between MEMS with electronic devices and circuits on SiC platform.

Keywords

microelectro-mechanical (MEMS)microstructuresensor
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd05-02
Copyright
Copyright © Materials Research Society 2014 

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References

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