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Si-N Bonding at The SiO2/Si Interfaces During Deposition of SiO2 by the Remote Pecvd Process

Published online by Cambridge University Press:  28 February 2011

Y. Ma ,
T. Yasuda ,
S. Habermehl  and
G. Lucovsky
Y. Ma
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
T. Yasuda
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
S. Habermehl
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

Thin films of SiO2 were deposited on Si substrates by remote PECVD following an in-situ cleaning/surface passivation with atomic-H. Si-N bonds were found in the immediate vicinity of the SiO2/Si interface when nitrous oxide, N2O, was used as O-atom source gas in the remote PECVD process. Si-N bonds, as well as Si-surface roughening produced by H-atom etching, contribute to the formation of high densities of midgap trapping states, Dit ∼1011 cm−2 eV−1, at the SiO2/Si interface. Eliminating the H-atom processing step, and exposing the Si surface to plasma-generated O-atoms prior to the SiO2 deposition: i) eliminated Si-N bonding at the Si/SiO2 interface; ii) reduced midgap Dit to ∼ 1–3×1010 cm−2eV−1 iii) eliminated surface roughening; and iv) improved process latitude and reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 799
Copyright
Copyright © Materials Research Society 1992

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References

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