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Simulation of Y-Ba-Cu-0 Epitaxial Growth and Microstructure Formation

Published online by Cambridge University Press:  25 February 2011

C. P. Burmester ,
L. T. Wille  and
R. Gronsky
C. P. Burmester
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA. Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720, USA.
L. T. Wille
Affiliation:
Department of Physics, Florida Atlantic University, Boca Raton, FL 33431, USA.
R. Gronsky
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720, USA. National Center for Electron Microscopy, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA.
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Abstract

The results of systematic computer simulations of the deposition and growth of Y-Ba-Cu-0 thin films is reported. The deposition process is modeled by means of a three-step Monte Carlo simulation incorporating one sorption deposition mode and two modes of film annealing addressing surface and bulk diffusion. The simulation is used to investigate the evolution of surface morphology and film microstructure, growth rate anisotropy, and the dependence of film texture on deposition parameters. Characteristic defects and surface morphologies observed by simulation are found to be in good agreement with those observed experimentally. It is observed that surface kinetics can dominate the evolution of film microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 847
Copyright
Copyright © Materials Research Society 1992

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References

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