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Simulation of Self-Heating and Temperature Effect in GaN-based Metal-Semiconductor Field-Effect Transistor

Published online by Cambridge University Press:  01 February 2011

Valentin O Turin  and
Alexander Balandin
Valentin O Turin
Affiliation:
[email protected], RPI, ECSE, CII 9015, 110 8th St, Troy, NY, 12180, United States, (518)-276-3058, (518)-276-2990
Alexander Balandin
Affiliation:
[email protected], UCR, EE, United States
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Abstract

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor field-effect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor performance is simulated. The specific of a thermal breakdown in GaN-based devices is discussed. The results obtained can be useful for the optimization of the thermal design for field-effect transistors.

Keywords

semiconductingdevicessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF13-05
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Khan, M.A. et al. , Appl. Phys. Lett. 62, 1786 (1993); 63, 1214 (1993).CrossRefGoogle Scholar
2. Wu, Y.-F., IEEE Electron Device Lett. 25, 117 (2004).Google Scholar
3. Balandin, A.A. et al. , IEEE Electron Device Lett. 19, 475 (1998).CrossRefGoogle Scholar
4. Yoshida, S. et al. , Solid-State Electron 47, 589 (2003).Google Scholar
5. Rinaldi, N., IEEE Trans. Electron Device 49, 679 (2002).CrossRefGoogle Scholar
6. Binari, S.C. et al. , Solid-State Electron 41, 1549 (1997).CrossRefGoogle Scholar
7. Liu, W.L. et al. , MRS Internet J. Nitride Semicond. Res. 9, 7 (2004).Google Scholar
8. Mnatsakanov, T.T. et al. , Solid-State Electron. 47, 111 (2003).CrossRefGoogle Scholar
9. Turin, V.O., Solid-State Electron. 49, 1678 (2005).CrossRefGoogle Scholar
10. Farahmand, M. et al. , IEEE Trans. Electron Devices, 48, 535 (2001).CrossRefGoogle Scholar
11. Bhapkar, U.V. and Shur, M.S., J. Appl. Phys. 82, 1649 (1997).CrossRefGoogle Scholar
12. Kuball, M. et al. , phys. stat. sol. (a) 202, 824 (2005).CrossRefGoogle Scholar
13. Nuttinck, S. et al. , IEEE Trans. Microwave Theory Tech. 51, 2445 (2003).CrossRefGoogle Scholar
14. Turin, V.O. and Balandin, A.A., Electron. Lett. 40, 81 (2004).CrossRefGoogle Scholar
15. Neudeck, P.G., Okojie, R.S., and Chen, L.-Y., Proc. IEEE, 90, 1065 (2002).CrossRefGoogle Scholar