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Simulation of Microposit 2400-17 Resist Profiles for 0.5μm Photolithography at 248 nm

Published online by Cambridge University Press:  25 February 2011

R. K. Watts ,
T. M. Wolf ,
L. E. Stillwagon  and
M. Y. Hellman
R. K. Watts
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
T. M. Wolf
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
L. E. Stillwagon
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. Y. Hellman
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Model parameters have been measured to characterize the exposure and development of Microposit 2400 resist exposed by a new deep UV wafer stepper at 248 nm. Resist profiles are obtained from the model for equal line/space patterns. The observed non-vertical wall profiles are correctly predicted by the simulation. These profiles result from the strong absorption of the resist and lack of photobleaching at 248 nm.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 333
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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