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Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
Published online by Cambridge University Press: 03 September 2012
Abstract
The behavior of H in p-GaN(Mg) at temperatures >400°C is modeled by using energies and vibration frequencies from density-functional theory to parameterize transport and reaction equations. Predictions agree semiquantitatively with experiment for the solubility, uptake, and release of the H when account is taken of a surface barrier.
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- Copyright © Materials Research Society 1999