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Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures

Published online by Cambridge University Press:  03 September 2012

S. M. Myers ,
A. F. Wright ,
G. A. Petersen ,
C. H. Seager ,
M. H. Crawford ,
W. R. Wampler  and
J. Han
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
A. F. Wright
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
G. A. Petersen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
M. H. Crawford
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
W. R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
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Abstract

The behavior of H in p-GaN(Mg) at temperatures >400°C is modeled by using energies and vibration frequencies from density-functional theory to parameterize transport and reaction equations. Predictions agree semiquantitatively with experiment for the solubility, uptake, and release of the H when account is taken of a surface barrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W9.4
Copyright
Copyright © Materials Research Society 1999

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