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Silicon Surface Texturization Mechanism by Hydrogen Radicals Using Tungsten Hot Filament

Published online by Cambridge University Press:  01 February 2011

Hiroshi Nagayoshi ,
Hiroaki Sato ,
Suzuka Nishimura  and
Kazutaka Terashima
Hiroshi Nagayoshi
Affiliation:
[email protected], Tokyo National College of Technology, 1220-2, Kunygida-machi, Hachoji, Tokyo, 1938610, Japan, +81-4268-5392
Hiroaki Sato
Affiliation:
[email protected], Shonan Institute of Technology, Japan
Suzuka Nishimura
Affiliation:
[email protected], Shonan Institute of Technology, Japan
Kazutaka Terashima
Affiliation:
[email protected], Shonan Institute of Technology, Japan
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Abstract

This paper describes the surface texturing mechanism on crystalline Si using hydrogen radicals generated by a tungsten hot filament. Inverted pyramid or labyrinthV groove structure could be obtained by particle deposition before etching. Mesh like tungsten particle layer, works as an etching mask against hydrogen radical, was obtained when silicon substrate was used. On the other hand, tungstem particles were not deposited as mesh like pattern when SiO2/Si substrate was used. The results suggest that evaporation of silicon hydrides from the silicon surface by hydrogen radical etching causes the mesh like pattern deposition of tungsten particles. Increase of filament current enables short time texturing process of less than 1 minute.

Keywords

crystallineSistructural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE07-21
Copyright
Copyright © Materials Research Society 2006

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References

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