Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-26T17:51:58.980Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Quantum Dots in Silica

Published online by Cambridge University Press:  10 February 2011

D. O. Henderson ,
M. H. Wu ,
R. Mu ,
A. Ueda ,
C. W. White  and
A. Meldrum
D. O. Henderson
Affiliation:
Chemical Physics Laboratory, Physics DepartmentFisk University, Nashville, TN
M. H. Wu
Affiliation:
Chemical Physics Laboratory, Physics DepartmentFisk University, Nashville, TN
R. Mu
Affiliation:
Chemical Physics Laboratory, Physics DepartmentFisk University, Nashville, TN
A. Ueda
Affiliation:
Chemical Physics Laboratory, Physics DepartmentFisk University, Nashville, TN
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
A. Meldrum
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
Get access

Abstract

Silicon ions were implanted into fused silica substrates at doses of 1×1021, 2×1021, 5×1021, and 1×1022 ions/cm3. The implanted substrates were annealed at 1100°C for one hour in a reducing atmosphere (95% Ar+5% H2). Optical absorption spectra recorded after the annealing treatment showed absorption onsets at 3.86, 3.73, 2.86 and 2.52 eV for substrates implanted with 1×1021, 2×1021, 5×1021, and 1×1022 ions/cm3, respectively. Static photoluminescence (PL) measurements indicated red emission between 1.72 and 1.61 nm with a slightly increasing red shift with ion dose. Time resolved PL at room temperature revealed slow (∼50 μs) and fast (×20 μs) lifetimes which increased with decreasing temperature. TEM studies showed that the particle size increased with increasing ion dose. Typical particle sizes ranged between 2 and 5 nm indicating quantum confinement of the exciton, which can account for the blue shift in the absorption edge with decreasing ion dose. However, the maxima in the PL spectra for all ion doses are relatively independent of the ion dose and are strongly shifted from the absorption spectra. This suggests that radiative recombination occurs from a common luminescent center, possibly a surface or interfacial state in thexs SiOx, layer surrounding the nanocrystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 551: Symposium JJ – Materials in Space-Science, Technology & Exploration , 1998 , 155
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Brus, L. E., J. Chem. Phys. 80, 4403 (1984).Google Scholar
2 Kanemitsu, Y., Ogawa, T., Shiraishi, K., and Takeda, K., Phys. Rev. B 48, pp. 4883–4886 (1993).Google Scholar
3 Diener, J., Chorin, M. Ben, Kovalev, D. I., Ganichev, S. D., and Koch, F., Phys. Rev. B 52, pp. R8617–R8620 (1995).Google Scholar
4 Chin, R. P., Shen, Y. R., and Pretova-Koch, V., Science 270, pp. 776–778 (1995).Google Scholar
5 Rebohle, L., Borany, J. von, Yankov, R. A., Skorupa, W., Tyschenko, I. E., Fröb, H., and Leo, K., Appl. Phys. Lett. 71, pp. 2809–2811 (1997).Google Scholar
6 Kim, K., Phys. Rev. B 57, pp. 13072–13076 (1998).Google Scholar
7 Lockwood, D.J., Lu, Z. H., and Baribeau, J. M., Phys. Rev. Lett. 76, pp. 539–541 (1996).Google Scholar
8 Tsybeskov, L., MRS Bulletin 23, pp.33–38 (1998).Google Scholar
9 Qin, G. and Qin, G.G., J. Appl. Phys. 82, pp. 2572–2579 (1997).Google Scholar
10 Hummel, R. E. and Wilßmann, P., Handbook of Optical Properties Volume II, Optics of Small Particles, Interfaces, and Surfaces, pp. 83–143, CRC, New York (1997) and references therein.Google Scholar
11 Allan, G., Delerue, C. and Lannoo, M., Phys. Rev. Lett. 76, pp.2961–2964 (1996).Google Scholar
12 White, C. W., Budai, J. D., Withrow, S. P., Zhu, J. G., Pennycock, S. J., Zuhr, R. A., Hembree, D. M., Henderson, D. O., Magruder, R. H., Yacaman, M. J., Mondragon, G., and Prawer, S., Nuclear Instruments and Methods B127/128, 545 (1997).Google Scholar
13 Yuang, Yu-Shen, Chen, Yang-Fang, Lee, Yang-Yao, and Lui, Li-Chi, J. Appl. Phys. 75, pp.3041–3044 (1994).Google Scholar
14 See pp. 84 in reference 10.Google Scholar
15 See pp. 115 in reference 10.Google Scholar