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Silicon based core-shell silicon nanowires for broadband and wide angle antireflection

Published online by Cambridge University Press:  18 March 2013

P. Pignalosa ,
H. Lee ,
W. Guo ,
X. Duan  and
Y. Yi
P. Pignalosa
Affiliation:
New York University, New York, NY City University of New York, SI/GC, New York, NY
H. Lee
Affiliation:
Beijing University of Science and Technology, Beijing
W. Guo
Affiliation:
City University of New York, SI/GC, New York, NY
X. Duan
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
Y. Yi*
Affiliation:
New York University, New York, NY City University of New York, SI/GC, New York, NY Massachusetts Institute of Technology, Cambridge, MA
*
*e-mail:[email protected]
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Abstract

Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60°) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

Keywords

nanostructureoptoelectronicsemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1510: Symposium DD – Group IV Semiconductor Nanostructures and Applications , 2013 , mrsf12-1510-dd05-13
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Li, W. D., Ding, F., Hu, J., and Chou, S. Y., Opt. Exp., 19, 3925 (2011)CrossRefGoogle Scholar
Berginski, M., Hüpkes, J., Schulte, M., Schöpe, G., Stiebig, H., Rech, B. and Wuttig, M., J. App. Phys, 101, 074903 (2007)CrossRefGoogle Scholar
Shah, A. V., Vanecek, M., Meier, J., Meillaud, F., Guillet, J., Fischer, D., Droz, C., Niquille, X., Fay, S., Vallat-Sauvain, E., Terrazzoni-Daudrix, V., Bailat, J., J. of Non-Crystalline Solids 338–340, 639 (2004)CrossRefGoogle Scholar
Hu, L. and Chen, G., Nano. Lett., 3249 (2007)CrossRefGoogle Scholar
Rim, S. B., Zhao, S., Scully, S. R. McGehee, M. D., and Peumans, P., Appl. Phys. Lett., 91, 243501 (2007)CrossRefGoogle Scholar
Zhao, J., Wang, A., Green, M. A., and Ferrazza, F., Appl. Phys. Lett., 73, 1991 (1998)CrossRefGoogle Scholar
Chopra, K. L., Paulson, P. D., and Dutta, V., Prog. Photovolt: Res. Appl. 12, 69 (2004)CrossRefGoogle Scholar
Muller, J., Rech, B., Springer, J., and Vanecek, M., Solar Energy 77, 917 (2004)CrossRefGoogle Scholar
Mutitu, J. G., Shi, S., Chen, C., Creazzo, T., Barnett, A., Honsberg, C. and Prather, D. W., Opt. Exp., 16, 15238 (2008)CrossRefGoogle Scholar
Zeng, L., Yi, Y., Hong, C., Liu, J., Duan, X. and Kimerling, L., Appl. Phys. Lett. 89, 111111 (2006)CrossRefGoogle Scholar
Zhou, D. and Biswas, R., J. Appl. Phys., 103, 093102 (2008)CrossRefGoogle Scholar
Sai, H., Kanamori, Y., Arafune, K., Ohshita, Y. and Yamaguchi, M., Prog. Photovolt. Res. Appl. 15, 415 (2007)CrossRefGoogle Scholar
Springer, J., Rech, B., Reetz, W., Muller, J., and Vanecek, M., Solar Energy Materials & Solar Cells 85, 1 (2005)Google Scholar
Nagel, J. R. and Scarpull, M. A., Opt. Exp., 18, A139 (2010)CrossRefGoogle Scholar
Poruba, A., Fejfar, A., Remes, Z., Springer, J., Vanecek, M., Kocka, J., Meier, J., Torres, P., and Shah, A., J. Appl. Phys., 88, 148 (2000)CrossRefGoogle Scholar
Fahr, S., Rockstuhl, C., and Lederer, F., Appl. Phys. Lett., 92, 171114 (2008)CrossRefGoogle Scholar
Zeng, L., Bermel, P., Yi, Y., Alamariu, B. A., Broderick, K. A., Liu, J., Hong, C., Duan, X., Joannopoulos, J., and Kimerling, L. C., Appl. Phys. Lett. 93 221105 (2008)CrossRefGoogle Scholar
Tsai, F., Wang, J., Huang, J., Kiang, Y., and Yang, C. C., Opt. Exp., 18, A207 (2010)CrossRefGoogle Scholar
Pillai, S., Catchpole, K. R., Trupke, T., and Green, M. A., J. Appl. Phys. 101, 093105 (2007)CrossRefGoogle Scholar
Catchpole, K. R. and Polman, A., Appl. Phys. Lett., 93, 191113 (2008)CrossRefGoogle Scholar
Beck, F. J., Polman, A., and Catchpole, K. R., J. Appl. Phys. 105, 114310 (2009)CrossRefGoogle Scholar
Gao, Di, He, Rongrui, Carraro, Carlo, Howe, Roger T., Yang, Peidong, and Maboudian, Roya, J. Am. Chem. Soc. 127, 4574–4575 (2005)CrossRefGoogle Scholar
Sunkara, M. K., Sharma, S., and Miranda, R., Appl. Phys. Lett., 79, 1546–1548 (2001)CrossRefGoogle Scholar
Wagner, R. S. and Ellis, W. C., Appl. Phys. Lett. 4, 89 (1964)CrossRefGoogle Scholar
Lombardi, I., Chem. Mater. 18, 988–991 (2006)CrossRefGoogle Scholar
Shingubara, S., Okino, O., Sayama, Y., Sakaue, H., Takahagi, T., Solid-State Electronics. 43, 1143 (1999)CrossRefGoogle Scholar
Peng, K., Appl. Phys. Lett. 90, 163123 (2007)CrossRefGoogle Scholar
Peng, K. Q., Yan, Y. J., Gao, S. P. and Zhu, J., Adv. Mater. 14 (16), 1164 (2002)3.0.CO;2-E>CrossRefGoogle Scholar
Tsakalakos, L., Balch, J., Fronheiser, J., Shih, M.-Y., LeBoeuf, S. F., Pietrzykowski, M., Codella, P. J., Korevaar, B. A., Sulima, O., Rand, J., Davuluru, A., and Rapolc, U., Journal of Nanophotonics, 1, 013552 (2007)CrossRefGoogle Scholar
Srivastava, S. K., Kumar, D., Singh, P. K., Kar, M., Kumar, V., Husain, M., Solar Energy Materials and Solar Cells, 94, 1506 (2010)CrossRefGoogle Scholar
Chiew, Y. L. and Cheong, K. Y., Physica E: Low-Dimensional Systems and Nanostructures, 42, 1338 (2010)CrossRefGoogle Scholar
Kolb, F. M., Hofmeister, H., Scholz, R., Zacharias, M., Gösele, U., Ma, D. D., and Lee, S.-T., Journal of The Electrochemical Society, 151, G472 (2004)CrossRefGoogle Scholar
Garnett, E. and Yang, P., Nano. Lett. 10, 1082–1087 (2010)CrossRefGoogle Scholar
Prokes, S. M. and Wang, K. L., Mater. Res. Bull. 24, 13 (1999)CrossRefGoogle Scholar
Wang, N., Tang, Y. H., Zhang, Y. F., Lee, C. S., Lee, S. T., Phys. Rev. B 58, R16024 (1998)CrossRefGoogle Scholar
Wu, Y. and Yang, P., J. Am. Chem. Soc. 123, 3165 (2001)CrossRefGoogle Scholar
Zhang, Y. F., Tang, Y. H., Wang, N., Lee, C.S., Bello, I. and Lee, S.T.. Journal of Crystal Growth, 197, 136 (1999)CrossRefGoogle Scholar
Shi, W. S., Zheng, Y. F., Wang, N., Lee, C. S. and Lee, S. T., Appl. Phys. Lett. 78 (21), 3304 (2001)CrossRefGoogle Scholar
Pan, Z. W., Dai, Z. R., Xu, L., Lee, S. T. and Wang, Z. L., J. Phys. Chem. B, 105, 2507 (2001)CrossRefGoogle Scholar
Wang, N., Tang, Y. H., Zhang, Y. F., Lee, C. S., and Lee, S. T., Phys. Rev. B. 58, R16024 (1998)CrossRefGoogle Scholar