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SiGe Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  22 February 2011

Maurizio Arienzo ,
James H. Comfort ,
Emmanuel F. Crabbé ,
David L. Marame ,
Subramanian S. Iyer ,
Bernard S. Meyerson ,
Gary L. Patton ,
Johannes M. C. Stork  and
Yuan-Chen Sun
Maurizio Arienzo
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
James H. Comfort
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Emmanuel F. Crabbé
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
David L. Marame
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Subramanian S. Iyer
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Bernard S. Meyerson
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Gary L. Patton
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Johannes M. C. Stork
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Yuan-Chen Sun
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

Strained layer growth of SiGe on Si by either Molecular Beam Epitaxy (MBE) or various methods of Chemical Vapor Deposition (CVD), including Limited Reaction Processing (LRP) and Ultra High Vacuum CVD (UHV/CVD) have been used to realize narrow bandgap base double heterojunction bipolar transistors (HBTs). This review paper will focus on the fabrication of high performance transistors, and on the material and process challenges facing the implementation of SiGe HBT technology. In particular, the use of SiGe alloys for bandgap engineering of bipolar devices and the development of self-aligned, epitaxial base bipolar device structures will be discussed, including the most recent accomplishment of 75 GHz ƒr heterojunction bipolar transistors, and the record sub-25 ps EC L ring oscillator delay. The design flexibility and trade-offs offered by SiGe heterojunction technology, like junction field/capacitance control, liquid nitrogen operation and complementary processes, arc also reviewed, to assess the leverage of a SiGe base bipolar technology in high speed circuits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 421
Copyright
Copyright © Materials Research Society 1991

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References

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