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SiC Power Electronic Devices, MOSFETs and Rectifiers

Published online by Cambridge University Press:  10 February 2011

J. A. Cooper ,
S-H. Ryu ,
Y. LI ,
M. Matin ,
J. Spitz ,
D. T. Morisesette ,
H. M. McGlothlin ,
M. K. Das ,
M. R. Melloch  and
M. A. Capano
...Show all authors
J. A. Cooper
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
S-H. Ryu
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
Y. LI
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
M. Matin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
J. Spitz
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
D. T. Morisesette
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
H. M. McGlothlin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
M. K. Das
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
M. R. Melloch
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
M. A. Capano
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
J. M. Woodall
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN [email protected]
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Abstract

SiC power switching devices have demonstrated performance figures of merit far beyond the silicon theoretical limits, but much work remains before commercial production will be feasible. A significant fraction of the remaining work centers on materials science issues. This paper reviews the current status of unipolar power switching devices in SiC and identifies the major technological and material science barriers that need to be overcome.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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References

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