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Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

Sergey Nikishin ,
Boris Borisov ,
Vladimir Kuryatkov ,
Mark Holtz  and
Henryk Temkin
Sergey Nikishin
Affiliation:
[email protected], Texas Tech University, department of ECE, Lubbock, TX, 79409, United States
Boris Borisov
Affiliation:
[email protected], Texas Tech University
Vladimir Kuryatkov
Affiliation:
[email protected], Texas Tech University
Mark Holtz
Affiliation:
[email protected], Texas Tech University
Henryk Temkin
Affiliation:
[email protected], Texas Tech University
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Abstract

We report the results of two studies of the growth and physical properties of AlGaN-based short-period superlattices (SPSLs), each aimed at improving light emission. In the first experiment, we grow structures on bulk AlN substrates. We observe ∼ 3 times higher luminescence efficiency than identically grown structures on sapphire. In the second experiment, we grow structures on sapphire while controlling the growth mode. We observe a significant improvement in the room temperature cathodoluminescence efficiency (at least by factor of 10) of AlGaN quantum wells when the 3D growth mode is induced by reduced flux of ammonia over identically prepared structures grown in the 2D mode.

Keywords

molecular beam epitaxy (MBE)RHEEDluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF01-06
Copyright
Copyright © Materials Research Society 2006

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References

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