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Shape Transitions of Self-Assembled Ge Islands on Si (001)

Published online by Cambridge University Press:  17 March 2011

Armando Rastelli ,
Matthias Kummer  and
Hans von Känel
Armando Rastelli
Affiliation:
INFM - Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
Matthias Kummer
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
Hans von Känel
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
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Abstract

Coherently strained Ge islands were grown at a substrate temperature of 550°C by magnetron sputter epitaxy on Si (001) and studied by scanning tunnelling microscopy (STM). The shape changes induced by exposure to a Si-flux at 450°C were investigated as a function of the Sicoverage. During Si-capping, multifaceted domes were found to flatten and to transform into {105}-faceted pyramids and subsequently into stepped mounds through intermediate shapes. The observed sequence of morphological changes is induced by Si-Ge intermixing and is shown to be the inverse of that occurring during Ge or Si1-xGex growth on Si (001). The results are interpreted with a model in which the stable shape of an island mainly depends on its volume and composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N5.4
Copyright
Copyright © Materials Research Society 2002

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