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Shallow Junction Formation in Silicon: Dopant Incorporation and Diffusion Through Tungsten Silicide Films Using Gas Immersion Laser Doping (Gild)

Published online by Cambridge University Press:  25 February 2011

Emi Ishida ,
K. -Josef Kramer ,
Somit Talwar ,
Thomas W. Sigmon ,
Kurt H. Weiner  and
William T. Lynch
Emi Ishida
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
K. -Josef Kramer
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
Somit Talwar
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
Thomas W. Sigmon
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
Kurt H. Weiner
Affiliation:
Lawrence Livermore National Laboratory, Physics “O” Division, Livermore, CA 94550
William T. Lynch
Affiliation:
Semiconductor Research Corporation, Research Triangle Park, NC 27709
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Abstract

We have demonstrated a new method of doping suicide films which uses a pulsed excimer laser and a wafer cell which is filled with dopant gas species, e.g. BF3, ASF5, PF5. A spatially homogenized 308nm XeCl pulsed laser is used as a heating source to drive adsorbed dopant gas species into the suicide, as well as to outdiffuse dopants into the silicon substrate. The total dose, interface concentration, and junction depth, are controlled by varying the number of laser pulses. High interface concentrations (Cint >1020 atoms/cm3) and shallow junctions (Xj < 1500Å) are obtained using this technique. Laser irradiation also results in smoothing of the suicide film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 673
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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