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Shallow Junction Engineering by Phosphorus and Carbon Co-implantation: Optimization of Carbon Dose and Energy

Published online by Cambridge University Press:  01 February 2011

Nathalie Cagnat ,
Cyrille Laviron ,
Daniel Mathiot ,
Chris Rando  and
Marc Juhel
Nathalie Cagnat
Affiliation:
[email protected], STMicroelectronics, Ion Implantation R&D, 850 rue Jean Monnet, Crolles, 38926, France, +33438923083, +33438922122
Cyrille Laviron
Affiliation:
[email protected], CEA-LETI, 17 rue des Martyrs, Grenoble, 38054, France, Metropolitan
Daniel Mathiot
Affiliation:
[email protected], InESS, 23 rue du Loess, Strasbourg, 67037, France, Metropolitan
Chris Rando
Affiliation:
[email protected], Freescale, 870 rue Jean Monnet, Crolles, 38926, France, Metropolitan
Marc Juhel
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, 38926, France, Metropolitan
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Abstract

Carbon co-implantation after pre-amorphization implantation (PAI) has been studied for Boron shallow implants and can be also used to reduce Phosphorus diffusion. The expected role of Carbon is to trap Si interstitials responsible of Phosphorus diffusion. A known drawback of this kind of co-implantation is junction leakage caused by Carbon deep levels. To find a compromise between diffusion reduction and leakages, it is necessary to optimize the location and the amount of Carbon with respect to Si interstitials.

In this work, we present full sheet experiments optimizing Carbon implanted energy and dose in order to minimize Phosphorus diffusion. First, we performed a PAI with Germanium. Then Carbon was implanted at several energies and doses to locate its projected range (Rp) at various locations with respect to the Phosphorus peak and the amorphous/crystalline interface. Finally the Phosphorus implant was placed completely within the amorphized area. Dopants were activated by a spike anneal at 1080°C, 1055°C or 1000°C. SIMS analysis and Rs measurements were used to understand Carbon action on Phosphorus diffusion and activation. The role of C in suppressing P diffusion is discussed in regards of the specificities of P diffusion mechanism.

Keywords

ion-implantationCP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F08-04
Copyright
Copyright © Materials Research Society 2007

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