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Sequential Stretching Lithography

Published online by Cambridge University Press:  01 February 2011

Haojing Lin
Affiliation:
[email protected], University of Nebraska, Department of Engineering Mechanics and Nebraska Center for Materials and Nanoscience, Lincoln, NE, 68588, United States
Ocelio V Lima
Affiliation:
[email protected], University of Nebraska, Department of Engineering Mechanics and Nebraska Center for Materials and Nanoscience, Lincoln, NE, 68588, United States
Li Tan
Affiliation:
[email protected], University of Nebraska, Department of Engineering Mechanics and Nebraska Center for Materials and Nanoscience, Lincoln, NE, 68588, United States
Zheng Li
Affiliation:
[email protected], University of Nebraska, Department of Engineering Mechanics and Nebraska Center for Materials and Nanoscience, Lincoln, NE, 68588, United States
Jiangyu Li
Affiliation:
[email protected], University of Nebraska, Department of Engineering Mechanics and Nebraska Center for Materials and Nanoscience, Lincoln, NE, 68588, United States
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Abstract

We developed an embossing/imprinting based nanofabrication technique, dubbed Sequential Stretching Lithography (SSL). In this process, a master pattern is imprinted into an elastomer containing a film of uncured elastomer. The elastomer is cured and then elongated to increase feature density and reduce feature size. Replication of this substrate yields a new master that can be used in further reduction steps. One-dimensional grating features with a pitch size below 200 nm were fabricated from 750 nm-pitch grating lines. This process gives us a faithful pattern miniaturization in all aspects and, as a result, a much effective control on density and dimension regulation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Jonkers, J., Plasma Sources Sci. T., 15(2), S8–S16 (2006).Google Scholar
2. Liu, G.Y., Xu, S. and Qian, Y.L., Acc. Chem. Res., 33, 457466 (2000)Google Scholar
3. Chou, S. Y., Krauss, P.R. and Renstrom, P.J., J. Vac. Sci. Technol. B, 14, 41294133 (1996)Google Scholar
4. Austin, M.D., Ge, H.X., Wu, W., Li, M.T., Yu, Z.N., Wasserman, D., Lyon, S.A., Chou, S.Y., App. Phys. Lett., 84, 52995301 (2004)Google Scholar
5. Tien, J., Nelson, C. M., and Chen, C. S., Proc. Natl. Acad. Sci. USA 99, 1758 (2002)Google Scholar
6. Tan, L., Kong, Y. P., Bao, L. R., Huang, X. D., Guo, L. J., Pang, S. W., and Yee, A. F., J. Vac. Sci. Technol. B 21, 2742 (2003)Google Scholar
7. (a) Ouyang, Z.Q., Tan, L., Liu, M.Z., Judge, O.S., Zhang, X.D., Li, H., Hu, J., Patten, T.E., Liu, G.Y., Small, 2, 884887 (2006); (b) L. Tan, Z.Q. Ouyang, M.Z. Liu, J. Hu, T.E. Patten, G.Y. Liu, J. Phys. Chem. B, 110, 23320 (2006)Google Scholar
8. Thilly, L., Lecouturier, F., Coffe, G., and Askenazy, S., IEEE Trans. App. Superconductivity, 12, 11811184 (2002)Google Scholar