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Semiconducting Polymer and Hydrogenated Amorphous Silicon Heterojunction Solar Cells

Published online by Cambridge University Press:  12 July 2011

A. R. Middya  and
Eric A. Schiff
A. R. Middya
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244 - 1130
Eric A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244 - 1130
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Abstract

In this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.

Keywords

polymerSiphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a05-06
Copyright
Copyright © Materials Research Society 2011

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References

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