Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T20:35:20.523Z Has data issue: false hasContentIssue false
  • English
  • Français

A Semi-Analytical Interpretation of Transient Electron Transport in Gallium Nitride, Indium Nitride, and Aluminum Nitride

Published online by Cambridge University Press:  10 February 2011

B. E. Foutz ,
S. K. O'Leary ,
M. S. Shur  and
L. F. Eastman
B. E. Foutz
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
S. K. O'Leary
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
M. S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
L. F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
Get access

Abstract

The energy dependent momentum and energy relaxation times, and the effective single valley energy dependent effective mass, are extracted from Monte Carlo simulations of gallium nitride, indium nitride, and aluminum nitride. A simple semi-analytical energy model, which uses these dependencies, is in good agreement with the results of transient Monte Carlo simulations. Both the Monte Carlo and the semi-analytical simulations show that the overshoot effects are most pronounced when the electric field abruptly changes from a value below a critical field to one above. This is attributed to the relatively large difference between the effective energy and momentum relaxation times for such a variation of electric field. Our calculations indicate that gallium nitride and indium nitride should have the most pronounced transient effects. A calculation of the transit times as a function of the gate length shows that an upper bound for the maximum expected cut-off frequencies are 260 GHz and 440 GHz for 0.2 μm gallium nitride and indium nitride field effect transistors, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 555
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nakamura, S., Mater. Res. Bull. 22 (2), 29 (1997).Google Scholar
[2] Ping, A. T., Chen, Q., Yang, J. W., Khan, M. Asif, and Adesida, I., IEEE Elec. Dev. Lett. 19, 54 (1998).Google Scholar
[3] Wu, Y. -F., Keller, B. P., Fini, P., Pusl, J., Le, M., Nguyen, N. X., Nguyen, C., Widman, D., Keller, S., Denbaars, S. P., and Mishra, U. K., Elec. Lett. 33, 1742 (1997).Google Scholar
[4] O'Leary, S. K., Foutz, B. E., Shur, M. S., Bhapkar, U. V., and Eastman, L. F., J. Appl. Phys. 83, 826 (1998).Google Scholar
[5] Bhapkar, U. V. and Shur, M. S., J. Appl. Phys. 82, 1649 (1997).Google Scholar
[6] Foutz, B. E., Eastman, L. F., Bhapkar, U. V., and Shur, M. S., Appl. Phys. Lett. 70, 2849 (1997).Google Scholar
[7] Foutz, B. E., O'Leary, S. K., Shur, M. S., Eastman, L. F., and Bhapkar, U. V., “Velocity overshoot and ballistic electron transport in wurtzite indium nitride,” Mater. Res. Soc. Proc. 482, Fall 1997 (in press).Google Scholar
[8] Shur, M., Elec. Lett. 12, 615 (1976).Google Scholar
[9] O'Leary, S. K., Foutz, B. E., Shur, M. S., Bhapkar, U. V., and Eastman, L. F., Solid State Commun. 10, 621 (1998).Google Scholar
[10] Also see http://iiiv.tn.cornell.edu/www/foutz/nitride.html for our current list of III-V nitride material parameters.Google Scholar
[11] Ridley, B. K., Rep. Prog. Phys. 54, 169 (1991).Google Scholar
[12] Carnez, B., Cappy, A., Kaszynski, A., Constant, E., and Salmer, G., J. Appl. Phys. 51, 784 (1980).Google Scholar