Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-24T09:18:47.219Z Has data issue: false hasContentIssue false
  • English
  • Français

Self-Poling of Thin BaTiO3 Films by Contact Potential Difference

Published online by Cambridge University Press:  10 February 2011

Igor Lubomirsky ,
David T. Chang  and
Oscar M. Stafsudd
Igor Lubomirsky
Affiliation:
Dept. of Electrical Engineering, University of California at Los Angeles, CA, 90024
David T. Chang
Affiliation:
Dept. of Electrical Engineering, University of California at Los Angeles, CA, 90024
Oscar M. Stafsudd
Affiliation:
Dept. of Electrical Engineering, University of California at Los Angeles, CA, 90024
Get access

Abstract

The substrate dependence of the ferroelectric properties of sol-gel derived BaTiO3 thin films was investigated. Thin (0.35 µm) films were deposited on Si substrates of various orientations and doping. Films deposited on p+ Si (1020 cm−3 B, 2% Ge) (110) were self-poled. The poling direction is self-restoring even after being reversed by an external bias or heated above the Curie temperature. The pyroelectric coefficient was not zero above the Curie point, which indicated that the films were permanently subjected to an electric field, which originates from the contact potential between the film and the substrate. Thisconclusion was confirmed by surface photo voltage spectroscopy. The possibility of a paraelectric to ferroelectric transition driven by an electric field due to the contact potential difference must be taken into account for dynamic random access memory (DRAM) applications.

Keywords

FerroelectricsBarium TitanateThin films
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 535
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Frey, M. H. and Payne, D. A., Appl. Phys. Lett. 63, 2753 (1993).Google Scholar
[2] Tsai, F. and Cowley, J. M., Appl. Phys. Lett. 65, 1906 (1994).Google Scholar
[3] Hsu, W. Y., Luttmer, J. D., Tsu, R., Summerfelt, S., Bedekar, M., Tokumoto, T., and Nulman, J., Appl. Phys. Lett. 66, 2975 (1995).Google Scholar
[4] Frey, M. H. and Payne, D. A., Phys. Rev. B 54, 3158 (1996).Google Scholar
[5] McNeal, M. P., Sei-Joo, J., and Newham, R. E., IEEE, Transaction on microwave theory and techniques, 837 (1996).Google Scholar
[6] Wada, N., Tanaka, H., Hamaji, Y., and Sakabe, Y., Jpn. J. App1. Phys. 35, 5141 (1996).Google Scholar
[7] Batra, I. P., Wurfel, P., and Silverman, B. D., Phys. Rev. Lett. 30, 384 (1973).Google Scholar
[8] Lubomirsky, I., Chang, D. T., and Stafsudd, O. M., J. Appl. Phys., (in press) (1999).Google Scholar