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Self-Organized ZnO Nanosize Islands with Low-Dimensional Characteristics on SiO2/Si Substrates by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  11 February 2011

Sang-Woo Kim ,
Shizuo Fujita  and
Shigeo Fujita
Sang-Woo Kim
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo, Kyoto 606–8501, Japan, [email protected]
Shizuo Fujita
Affiliation:
International Innovation Center, Kyoto University Yoshida-honmachi, Sakyo, Kyoto 606–8501, Japan
Shigeo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo, Kyoto 606–8501, Japan, [email protected]
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Abstract

Self-organized ZnO nanosize islands on thermally grown SiO2 layers on Si (111) with low-dimensional quantum characteristics were realized by metalorganic chemical vapor deposition. Investigation by atomic force microscopy showed that the density and size of the ZnO nanosize islands were changed by the growth conditions. In macroscopic photoluminescence measurements at 10 K using a 325 nm He-Cd laser, we observed the broad spectra with band tails, which were located at the higher energy with respect to band edge emission of ZnO thin films with the free exciton emission located at about 3.38 eV. These results indicate that these ZnO nanosize islands have low-dimensional quantum effect characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 739: Symposium H – Three-Dimensional Nanoengineered Assemblies , 2002 , H4.8
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Hümmer, K., Phys. Status Solidi B 56, 249 (1973).Google Scholar
2. Pan, Z. W., Dai, Z. R., and Wang, Z. L., Science 291, 1947 (2001).Google Scholar
3. Wong, E. M. and Searson, P. C., Appl. Phys. Lett. 74, 2939 (1999).Google Scholar
4. Muthukumar, S., Gorla, C. R., Emanetoglu, N. W., Liang, S., and Lu, Y., J. Cryst. Growth 225, 197 (2001).Google Scholar
5. Kim, S.-W, Fujita, Sz., and Fujita, Sg., Appl. Phys. Lett. 81, 5036 (2002).Google Scholar
6. Wong, E. M. and Searson, P. C., Appl. Phys. Lett. 74, 2939 (1999).Google Scholar