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Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

Published online by Cambridge University Press:  11 February 2011

M. Kuball ,
S. Rajasingam ,
A. Sarua ,
M. J. Uren ,
T. Martin ,
R. S. Balmer  and
K. P. Hilton
M. Kuball
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol BS8 1TL, United Kingdom
S. Rajasingam
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol BS8 1TL, United Kingdom
A. Sarua
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol BS8 1TL, United Kingdom
M. J. Uren
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
T. Martin
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
R. S. Balmer
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
K. P. Hilton
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
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Abstract

We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1m spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L9.7
Copyright
Copyright © Materials Research Society 2003

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References

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