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The Self-Assembling “Grow-in-Place” Process: An Environmentally Friendly Approach to Nanowire Device Fabrication

Published online by Cambridge University Press:  26 February 2011

Yinghui Shan
Affiliation:
[email protected], The Pennsylvania State University, Engineering Science and Mechanics, 0114 Lubert Building, University Park, PA, 16802, United States, 8148658381
Ali Kaan Kalkan
Affiliation:
[email protected], The Pennsylvania State University, Engineering Science and Mechanics, United States
Stephen J. Fonash
Affiliation:
[email protected], The Pennsylvania State University, Engineering Science and Mechanics, United States
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Abstract

Silicon nanowires (SiNWs) were fabricated directly from the Si source gas into pre-fabricated permanent nanochannel templates by our self-assembling “grow-in-place” approach. The size, shape, position, orientation, and number of the SiNWs can be precisely controlled by the pre-fabricated nanochannel templates. Our approach is environmentally benign and friendly since only the exact number of SiNWs needed was grown and the SiNWs were always confined in the nanochannel templates. In addition, the templates can be fabricated with built-in contacts and integrated into the final devices, providing contacts, interconnects, and passivation/encapsulation. We are developing a variety of built-in ohmic and rectifying contact structures and approaches for the “grow-in-place” methodology. Some initial results will be discussed here.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 (a) Lieber, C. M. Solid State Commun. 1998, 107, 607. (b) Hu, J.; Odom T. W.; Lieber C. M. Acc. Chem. Res. 1999, 32, 435. (c) Dekker, C. Phys. Today 1999, 52(5), 22.Google Scholar
2 Cui, Y.; Lieber, C. M. Science 2001, 291, 851853 Google Scholar
3 Cui, Y.; Wei, Q. Q.; Park, H.; Lieber, C. M. Science 2001, 293, 12891292.Google Scholar
4 Duan, X. F.; Huang, Y.; Cui, Y.; Wang, J. F.; Lieber, C. M. Nature 2001, 409, 6669.Google Scholar
5 Zheng, G. F.; Patolsky, F.; Cui, Y.; Wang, W. U.; Lieber, C. M. Nature Biotechnology 2005, 23. 12941301 Google Scholar
6 Roco, M. C., Karn, B.; Environ. Sci. Technol. A-Pages, 2005, 39(5), 106A112A Google Scholar
7 Shan, Y.; Kalkan, A. K.; Peng, C. Y.; Fonash, S. J. Nano Lett. 2004, 4, 2085;Google Scholar
8 Lew, K., Redwing, J., J. Cryst. Growth 2003, 254, 14 Google Scholar
9 Sze, S.M. Physics of Semiconductor Device, 2nd edition, Wiley-Interscience publication.Google Scholar
10 Wang, Y. F.; Lew, K. K.; Ho, T.; Pan, L.; Novak, S. W. Dickey, E. C.; Redwing, J. W.; Mayer, T. S.; Nano Letter 2005, 5, 2139.Google Scholar