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Self-assembled Si/Ge quantum dot structures for novel device applications

Published online by Cambridge University Press:  11 February 2011

K. Brunner ,
D. Bougeard ,
A. Janotta ,
M. Herbst ,
P. H. Tan ,
H. Riedl ,
M. Stutzmann  and
G. Abstreiter
K. Brunner
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
D. Bougeard
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
A. Janotta
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
M. Herbst
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
P. H. Tan
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
H. Riedl
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
G. Abstreiter
Affiliation:
Walter Schottky Institute, TU Munich, Am Coulombwall, D-85748 Garching, Germany
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Abstract

The band structure of self-assembled Si/Ge quantum dot structures deposited by molecular beam epitaxy in the Stranski Krastanov growth mode is characterized by optical and electrical spectroscopy. Interband and intraband absorption, photocurrent, photoluminescence, Raman and admittance spectroscopy of structures with quantum dots of about 20 nm lateral size offer insight into the discrete level scheme within the valence band, the optical transitions and the lifetime of localized hole states. The results are discussed with respect to their possible applications in infrared light detection, storage and quantum-logic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F2.1
Copyright
Copyright © Materials Research Society 2003

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References

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