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Self-Assembled GdSi2 Nanostructures Grown on Si(001) Studied by TEM and STM

Published online by Cambridge University Press:  26 February 2011

Gangfeng Ye ,
Martin A. Crimp  and
Jun Nogami
Gangfeng Ye
Affiliation:
[email protected], Michigan State University, 2527 Engineering Building, Michigan State University, East Lansing, MI, 48824, United States
Martin A. Crimp
Affiliation:
Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824-1226USA
Jun Nogami
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, ON, Canada M5S 3E4
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Abstract

Self-assembled gadolinium silicide (GdSi2) nanostructures grown on Si(001) were studied by transmission electron microscopy (TEM) and scanning tunneling microscopy (STM). Cross-sectional TEM and plan-view TEM moiré fringe pattern analyses show that the GdSi2 nanostructures can be divided into two classes: elongated nanowires with hexagonal crystal structure and rectangular islands with orthorhombic or tetragonal crystal structure.

Keywords

nanostructureself-assemblytransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 901: Symposium R – Assembly at the Nanoscale – Toward Functional Nanostructured Materials , 2005 , 0901-Ra13-05
Copyright
Copyright © Materials Research Society 2006

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References

[1] Preinesberger, C., Vandre, S., Kalka, T., and Dahne-Prietsch, M., J. Phys. D 31, L43 (1998).Google Scholar
[2] Chen, Y., Ohlberg, D.A.A., Medeiros-Ribeiro, G., Chang, Y. A., and Williams, R. S., App. Phys. Lett. 76, 4004 (2000).Google Scholar
[3] Nogami, J., Liu, B. Z., Katkov, M. V., Ohbuchi, C., and Birge, N. O., Phys. Rev. B63, 233305 (2001).Google Scholar
[4] He, Z., Stevens, M., Smith, D. J., and Bennett, P. A., App. Phys. Lett. 83, 5292 (2003).Google Scholar
[5] Chen, J. C., Shen, G. H., and Chen, L. J., Appl. Surf. Sci. 142, 291 (1999).Google Scholar
[6] Chen, Y., Ohlberg, D. A. A., Medeiros-Ribeiro, G., Chang, Y. A., and Williams, R. S., Appl. Phys. A75, 353 (2002).Google Scholar
[7] Chen, Y., Ohlberg, D. A.A., and Williams, R. S., J. Appl. Phys. 91, 3213 (2002).Google Scholar
[8] Maex, K. and Rossum, M., Properties of Metal Silicides (INSPEC, 1995).Google Scholar
[9] Liu, B. and Nogami, J., J. Appl. Phys. 93, 593 (2003).Google Scholar
[10] Williams, D. B. and Carter, C. B., Transmission Electron Microscopy (Plenum, 1996).Google Scholar
[11] Liu, B.Z. and Nogami, J., Nanotechnology 14, 873 (2003).Google Scholar