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Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory

Published online by Cambridge University Press:  01 February 2011

Yan Zhu ,
Bei Li  and
Jianlin Liu
Yan Zhu
Affiliation:
[email protected], University of California, Riverside, Electrical Engineering, 900 University Ave, Riverside, CA, 92507, United States, 951-827-7131, 951-827-2425
Bei Li
Affiliation:
[email protected], University of California, Riverside, Department of Electrical Engineering, 900 University Ave, Riverside, CA, 92521, United States
Jianlin Liu
Affiliation:
[email protected], University of California, Riverside, Department of Electrical Engineering, 900 University Ave, Riverside, CA, 92521, United States
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Abstract

This work describes a novel nonvolatile memory device with self-aligned TiSi2/Si hetero-nanocrystal charge storage nodes. The TiSi2/Si hetero-nanocrystals can be readily fabricated using industrial standard self-aligned silicidation technique based on Si nanocrystals deposited on ultra-thin tunnel oxide with LPCVD. As compared with a Si nanocrystal memory device, a TiSi2/Si hetero-nanocrystal memory device exhibits faster programming and erasing, and longer retention time.

Keywords

memorynanostructuremicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I02-05
Copyright
Copyright © Materials Research Society 2007

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References

[1] Tiwari, S., et al. Appl. Phys. Lett. 68, 1377 (1996).Google Scholar
[2] Shi, Y., Saito, K., Ishikuro, H., and Hiramoto, T., Jpn. J. Appl. Phys. 38, 425 (1999).Google Scholar
[3] Ho, V., Teo, L. W., Choi, W. K., Chim, W. K., and Tay, M. S., Appl. Phys. Lett., 83, 3558 (2003)Google Scholar
[4] Liu, Z. T., Lee, C., Narayanan, V., Pei, G., and Kan, E. C., IEEE Trans. Electron Dev. 49, 1606 (2002).Google Scholar
[5] Lee, C. H., Meteer, J., Narayanan, V., and Kan, E. C., J. Electron Mater. 34, 1 (2005).Google Scholar
[6] Lee, J. J., and Kwong, D. L., IEEE Trans. Electron Dev. 52, 507 (2005).Google Scholar
[7] Chang, T. C., Liu, P. T., Yan, S. T., and Sze, S. M., Electrochem. Solid-State Lett. 8, G71 (2005).Google Scholar
[8] Miura, Y., and Fujieda, S., J. Appl. Phys. 81, 6476 (1997).Google Scholar
[9] Ranjit, R., Zagozdzon-Wosik, W., Rusakova, I., Heide, P. van der, Zhang, Z. H., Bennett, J., and Marton, D., Rev. Adv. Mater. Sci. 8, 176 (2004).Google Scholar
[10] Lee, J. J. and Kwong, D. L., IEEE Trans. Electron Devices 52, 507 (2005).Google Scholar
[11] Korotkov, A. and Likharev, K., IEDM. Tech. Digest, pp. 223–226, 1999.Google Scholar