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Self Aligned Nitridation of TiSi2: A TiN/TiSi2Contact Structure

Published online by Cambridge University Press:  26 February 2011

Paul J. Rosser  and
Gary J. Tomkins
Paul J. Rosser
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, UK
Gary J. Tomkins
Affiliation:
Standard Telephones and Cables, Maidstone Road, Foots Cray, Kent, UK.
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Abstract

Titanium nitride is an ideal barrier to silicon migration into aluminium metallisations in MOS devices. Various means by which a TiN,TiSi2 contact structure can be achieved to give low resistivity interconnects and stable contacts are outlined. It is shown that TiN/ TiSi2 contact structures self aligned to contact holes cut down to the TiSi2 can be simply achieved. Results showing the stability of the nitride film against silicon diffusion are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 607
Copyright
Copyright © Materials Research Society 1985

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References

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